selected publications

• letter

  • New ordering of the InAs growth through high-temperature treatment of the GaAs (100) substrates.  Japanese Journal of Applied Physics, Part 2: Letters. L410-L413. 2003-01-01

• article

  • Study of the electrical and physical properties of the CdS/ZnS n-n homopolar junction synthesized by SILAR.  MRS Communications.  14:41-47. 2024-01-01
  • Band structure and strain distribution of InAs quantum dots encapsulated in (Al)GaAs asymmetric matrixes.  Journal of Vacuum Science & Technology A.  41:-. 2023-01-01
  • Control method for periodically faceted surfaces and application on AlGaAs/GaAs (631) heterostructures.  Applied Surface Science.  611:-. 2023-01-01
  • Growth of Nanocolumnar TiO2 Bilayer by Direct Current Reactive Magnetron Sputtering in Glancing-Angle Deposition Configuration for High-Quality Electron Transport Layer.  Micromachines.  14:-. 2023-01-01
  • Optical analysis of tin-doped GaNAs layers grown on GaAs by molecular beam epitaxy.  Journal of Materials Science: Materials in Electronics.  34:-. 2023-01-01
  • Hyperbolic-tan graded composition InxGa1-xAs layers for THz radiation emitters.  Journal of Crystal Growth.  589:-. 2022-01-01
  • Hyperbolic-tangent composition-graded InxGa1-xAs/GaAs (100) structures grown by molecular beam epitaxy.  Materials Science in Semiconductor Processing.  142:-. 2022-01-01
  • In-situ study of InAs quantum dots encapsulated in asymmetric (Al)GaAs confinement barriers.  Revista Mexicana de Fisica.  68:-. 2022-01-01
  • Strain and annealing temperature effects on the optical properties of GaNAs layers grown by molecular beam epitaxy.  Thin Solid Films.  748:-. 2022-01-01
  • Terahertz emission from gradient InGaAs surfaces.  Applied Physics Letters.  119:-. 2021-01-01
  • Characterization of eigenstates interface-modulated in GaAs (631) multi-quantum well heterostructures.  Journal of Applied Physics.  128:-. 2020-01-01
  • GaAs/InGaAs heterostructure strain effects on self-assembly of InAs quantum dots.  Physica E: Low-Dimensional Systems and Nanostructures.  124:-. 2020-01-01
  • Overlapping effects of the optical transitions of GaNAs thin films grown by molecular beam epitaxy.  Thin Solid Films.  702:-. 2020-01-01
  • Physical characterization of sunflower seeds dehydrated by using electromagnetic induction and low-pressure system.  Innovative Food Science and Emerging Technologies.  60:-. 2020-01-01
  • Aging spectral markers of tequila observed by Raman spectroscopy.  European Food Research and Technology.  245:1031-1036. 2019-01-01
  • Characterization of n-GaN / p-GaAs NP heterojunctions.  Superlattices and Microstructures.  136:-. 2019-01-01
  • Magnetic properties of GaAs:Mn self-assembled nanostructures grown at relatively high-temperature by Molecular Beam Epitaxy.  Journal of Magnetism and Magnetic Materials.  475:715-720. 2019-01-01
  • InAs quantum dots nucleation on (100) and anisotropic (631)-oriented GaAs substrates.  Physica E: Low-Dimensional Systems and Nanostructures.  95:22-26. 2018-01-01
  • Self-ordering of InAs nanostructures on (631)A/B GaAs substrates.  Japanese Journal of Applied Physics.  57:-. 2018-01-01
  • Efficiency of broadband terahertz rectennas based on self-switching nanodiodes.  Journal of Photonics for Energy.  7:-. 2017-01-01
  • Nanowire Y-junction formation during self-faceting on high-index GaAs substrates.  RSC Advances.  7:17813-17818. 2017-01-01
  • Optical spectroscopy analysis of the near surface depletion layer in AlGaAs/GaAs heterostructures grown by MBE.  Journal of Crystal Growth.  477:59-64. 2017-01-01
  • Strain and anisotropy effects studied in InAs/GaAs(2 2 1) quantum dashes by Raman spectroscopy.  Journal of Crystal Growth.  477:212-216. 2017-01-01
  • Ag-N dual acceptor doped p-type ZnO thin films by DC reactive magnetron co-sputtering 2016-01-01
  • Determination of the depletion layer width and effects on the formation of double-2DEG in AlGaAs/GaAs heterostructures.  Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics.  34:-. 2016-01-01
  • Effects of growth temperature on the incorporation of nitrogen in GaNAs layers.  Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics.  34:-. 2016-01-01
  • New orientations in the stereographic triangle for self-assembled faceting.  AIP Advances.  6:-. 2016-01-01
  • Photoluminescence and Raman Spectroscopy Studies of Carbon Nitride Films.  Journal of Spectroscopy.  2016:-. 2016-01-01
  • Photoreflectance and raman study of surface electric states on AlGaAs/GaAs heterostructures.  Journal of Spectroscopy.  2016:-. 2016-01-01
  • Structural characterization of AlGaAs:Si/GaAs (631) heterostructures as a function of As pressure.  Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics.  34:-. 2016-01-01
  • Study of InAlAs/InGaAs self-switching diodes for energy harvesting applications.  Japanese Journal of Applied Physics.  55:-. 2016-01-01
  • Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy.  Applied Surface Science.  333:92-95. 2015-01-01
  • Si-doped AlGaAs/GaAs(6 3 1)A heterostructures grown by MBE as a function of the As-pressure.  Journal of Crystal Growth.  425:85-88. 2015-01-01
  • Terahertz harvesting with shape-optimized InAlAs/InGaAs self-switching nanodiodes.  AIP Advances.  5:-. 2015-01-01
  • Thermoluminescent properties of ZnS: Mn nanocrystalline powders.  Applied Radiation and Isotopes.  99:105-109. 2015-01-01
  • Band gap engineering of indium zinc oxide by nitrogen incorporation.  Materials Science and Engineering B: Solid-State Materials for Advanced Technology.  187:83-88. 2014-01-01
  • Determination of surface electric potential by photoreflectance spectroscopy of HEMT heterostructures.  Journal of Crystal Growth.  378:100-104. 2013-01-01
  • MBE growth and characterization of (100) and (631)-oriented modulation doped AlGaAs/GaAs heterostructures.  Journal of Crystal Growth.  378:88-91. 2013-01-01
  • Polarized Raman spectroscopy of corrugated MBE grown GaAs (6̄3̄1̄) homoepitaxial films.  Journal of Crystal Growth.  378:105-108. 2013-01-01
  • Study of the pseudo-(1×1) surface by RHEED and XPS for InGaN/GaN (0001)/Al2O3 heterostructures grown by PA-MBE.  Journal of Crystal Growth.  378:295-298. 2013-01-01
  • Electrical and optical properties of Si doped GaAs (631) layers studied as a function of the growth temperature.  Journal of Crystal Growth.  347:77-81. 2012-01-01
  • Highly ordered self-assembled nanoscale periodic faceting in GaAs(631) homoepitaxial growth.  Applied Physics Letters.  101:-. 2012-01-01
  • Optical and electrical properties of Si-doped GaAs films grown on (631)-oriented substrates.  Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics.  30:-. 2012-01-01
  • Photoluminescence study of self-assembled GaAs quantum wires on (631)A-oriented GaAs substrates.  Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics.  30:-. 2012-01-01
  • As-pressure influence on the surface corrugation in the homoepitaxial growth of GaAs (6 3 1)A.  Journal of Crystal Growth.  316:149-152. 2011-01-01
  • Effect of oxygen incorporation on the vibrational properties of Al 0.2Ga0.3In0.5P:Be films.  Thin Solid Films.  520:53-56. 2011-01-01
  • Effect of substrate conductivity on the thickness and composition of GaAlSb epitaxial layers grown by liquid phase epitaxy.  Thin Solid Films.  519:3029-3031. 2011-01-01
  • Polarization and excitation dependence of photoluminescence of InAs quantum wires and dots grown on GaAs(6̄3̄1̄).  Japanese Journal of Applied Physics.  50:-. 2011-01-01
  • Study of the conduction-type conversion in Si-doped (631)A GaAs layers grown by molecular beam epitaxy.  Physica Status Solidi (C) Current Topics in Solid State Physics.  8:282-284. 2011-01-01
  • Effects of in situ annealing of GaAs(100) substrates on the subsequent growth of InAs quantum dots by molecular beam epitaxy.  Nanotechnology.  21:-. 2010-01-01
  • Modulation spectroscopy of InAs semiconductor nanostructures grown on (631) high index substrates.  Physica Status Solidi (A) Applications and Materials Science.  206:836-841. 2009-01-01
  • Study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs substrates subjected to different treatments.  Journal of Crystal Growth.  311:1666-1670. 2009-01-01
  • Study of the molecular beam epitaxial growth of InAs on Si-covered GaAs(1 0 0) substrates.  Journal of Crystal Growth.  311:1451-1455. 2009-01-01
  • Study of the oxygen incorporation in Al0.2Ga0.3In0.5P:Be layers grown by MBE employing a P-cracker cell.  Journal of Crystal Growth.  311:1650-1654. 2009-01-01
  • Photo-selective chemical etching of InAs and GaSb to manufacture microscopic mirrors.  Journal of Applied Electrochemistry.  38:269-271. 2008-01-01
  • Structural and optical properties of InAs quantum dots grown by molecular beam epitaxy.  Microelectronics Journal.  39:1248-1250. 2008-01-01
  • P-cracker cell temperature effects on the optical properties of AlGaInP:Be layers grown by SSMBE.  Journal of Crystal Growth.  301-302:84-87. 2007-01-01
  • Study of the GaAs MBE growth on (6 3 1)-oriented substrates by Raman spectroscopy.  Journal of Crystal Growth.  301-302:884-888. 2007-01-01
  • Photoreflectance study of InAs quantum dots on GaAs(n 1 1) substrates.  Physica E: Low-Dimensional Systems and Nanostructures.  32:139-143. 2006-01-01
  • Structure and homoepitaxial growth of GaAs(6 3 1).  Applied Surface Science.  252:5530-5533. 2006-01-01
  • InAs quantum dots grown on GaAs (100) surfaces subjected to novel in-situ treatments.  Revista Mexicana de Fisica.  51:230-235. 2005-01-01
  • Investigation of the composition-pulling or lattice-latching effect in LPE.  Journal of Crystal Growth.  277:138-142. 2005-01-01
  • Molecular beam epitaxial growth of GaAs on (631) oriented substrates.  Japanese Journal of Applied Physics, Part 2: Letters.  44:L1556-L1559. 2005-01-01
  • In situ monitoring of the 2D-3D growth-mode transition in In 0.3 Ga 0.7 As/GaAs (0 0 1) by reflectance-difference spectroscopy.  Applied Surface Science.  221:48-52. 2004-01-01
  • Self-assembled GaAs quantum dots on pseudomorphic Si layers grown on AlGaAs by molecular beam epitaxy.  Japanese Journal of Applied Physics, Part 2: Letters.  41:L916-L918. 2002-01-01
  • AlGaAs/GaAs two-dimensional electron gas structures studied by photoreflectance spectroscopy.  Revista Mexicana de Fisica.  47:548-552. 2001-01-01
  • Improvement in the crystal quality of ZnSe films on Si(111) substrates with a nitrogen surface treatment.  Thin Solid Films.  373:33-36. 2000-01-01
  • Molecular beam epitaxial growth of ZnSe layers on GaAs and Si substrates.  Physica Status Solidi (B) Basic Research.  220:99-109. 2000-01-01
  • Reduction in the crystal defect density of ZnSe layers grown by molecular beam epitaxy.  Revista Mexicana de Fisica.  46:148-152. 2000-01-01
  • Growth of ZnSe and ZnS films on Si(111) substrates with a nitrogen surface treatment.  Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures.  17:1259-1262. 1999-01-01
  • Two-dimensional growth mode promotion of ZnSe on Si(1 1 1) by using a nitrogen substrate surface treatment.  Journal of Crystal Growth.  201:518-523. 1999-01-01
  • Si substrate treatment with nitrogen for molecular beam epitaxial growth of ZnSe.  Electronics Letters.  34:1791-1793. 1998-01-01
  • Structural, optical and electrical characteristics of yttrium oxide films deposited by laser ablation.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films.  16:3305-3310. 1998-01-01
  • Study of the initial growth process of ZnSe on Si(111) by molecular beam epitaxy.  Japanese Journal of Applied Physics, Part 2: Letters.  36:L1153-L1156. 1997-01-01

• conference paper

  • Evaluation of sialic acid as a biomarker by THz spectroscopy.  International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz. -. 2017-01-01
  • W-Shape nanodiode controlled by surface states for THz detection.  International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz. -. 2017-01-01
  • Effect of the surface on optical properties of AlGaAs/GaAs heterostructures with double 2-DEG.  Animal. A57-A62. 2013-01-01
  • Effect of the surface on optical properties of AlGaAs/GaAs heterostructures with double 2-DEG.  Materials Research Society Symposium Proceedings. A57-A62. 2013-01-01
  • Preliminary evaluation of quantum hall effect devices by photoreflectance spectroscopy.  19th IMEKO World Congress 2009. 1906-1910. 2009-01-01
  • AFM and FTIR characterization of microcrystalline Si obtained from isothermal annealing of Al/a-Si:H.  Physica Status Solidi (A) Applications and Materials Science. 1014-1017. 2007-01-01
  • Recent measurements of the quantum hall effect in AlGaAs/GaAs heterostructures to obtain a resistance standard.  2006 3rd International Conference on Electrical and Electronics Engineering. -. 2006-01-01
  • Evaluation of AlGaAs/GaAs two dimensional electron gas heterostructures to obtain a resistance standard.  2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005. 424-427. 2005-01-01
  • Photoluminescence properties of Be-doped GaAs/(Al0.2Ga 0.8)0.51In0.49P heterostructures subjected to annealing processes.  Journal of Crystal Growth. 585-590. 2005-01-01
  • Photoreflectance investigations of HEMT structures grown by MBE.  Journal of Crystal Growth. 591-595. 2005-01-01
  • Improvement on the InAs quantum dot size distribution employing high-temperature GaAs(100) substrate treatment.  Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1503-1507. 2004-01-01
  • Quantum Hall effect devices based on AlGaAs/GaAs structures studied by photoreflectance spectroscopy.  Applied Surface Science. 204-208. 2004-01-01
  • Structural characterization of microcrystalline-amorphous hydrogenated silicon samples prepared by PECVD method.  Proceedings of SPIE - The International Society for Optical Engineering. 1540-1543. 2004-01-01
  • Growth of self-assembled InAs quantum dots on Si exposed GaAs substrates by molecular beam epitaxy.  Journal of Crystal Growth. 201-207. 2003-01-01
  • Study of internal electric fields in AlGaAs/GaAs two-dimensional electron gas heterostructures.  Microelectronics Journal. 521-523. 2003-01-01
  • Study of the GaAs growth on pseudomorphic Si layers for the formation of self-assembled quantum dots.  Journal of Crystal Growth. 236-242. 2003-01-01
  • Synthesis of GaAs quantum dots on Si-layers on AlGaAs films grown on GaAs(100).  Thin Solid Films. 63-67. 2003-01-01
  • Growth of self-assembled InAs quantum dots on Si exposed GaAs substrates by molecular beam epitaxy.  MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. 367-368. 2002-01-01
  • Photoreflectance spectroscopy of AlGaAs/GaAs heterostructures with a two-dimensional electron gas system.  Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1238-1242. 2002-01-01
  • Study of the GaAs growth on pseudomorphic Si layers for the formation of self-assembled quantum dots.  MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. 347-348. 2002-01-01
  • Study of the crystal quality and Ga-segregation in ZnSe films grown by molecular beam epitaxy on AlxGa1-xAs and InxGa1-xAs buffer layers on GaAs substrates.  Journal of Crystal Growth. 639-644. 2001-01-01
• Nucleation and diffusion processes during the stacking of bilayer quantum dot InAs/GaAs heterostructures.  Journal of Crystal Growth. -. 2021-01-01
• Effect of surface states on the electrical properties of MBE grown modulation doped AlGaAs/GaAs.  Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. -. 2014-01-01