abstract

• In order to improve the rectification efficiency and current-voltage characteristics of self-switching diodes (SSD) the DC response is analyzed using technology computer aided design (TCAD). It is demonstrated that by varying geometrical parameters of L- and V-shaped SSDs or changing the dielectric permittivity of the trenches, a near zero threshold voltage can obtained, which is essential for energy harvesting applications. The carrier distribution inside the nanochannel is successfully simulated in two-dimensional mode for zero-, reverse-, and forward-bias conditions. This process allows for the evaluation of the effect of the lateral surface-charge on the formation and spatial distribution of the depletion region, in addition to, obtaining information on the physics of the SSD through the propose optimized geometries that were designed for tailoring and matching the desired frequencies of operation. The numerical results showed some insights for the improvement of the rectification efficiency and integration density using parallel SSD arrays. © 2016 The Japan Society of Applied Physics.

authors

• Briones E.
• Briones J.
• Cortes Mestizo Irving Eduardo
• Droopad R.
• Hehn M.
• McMurtry S.
• Montaigne F.
• Méndez García Víctor Hugo
• Pérez Caro M.

publication date

• 2016-01-01

published in

• Japanese Journal of Applied Physics  Journal

keywords

• Computer aided design; Current voltage characteristics; Electronic design automation; Energy harvesting; Geometry; Permittivity; Semiconductor switches; Threshold voltage; Carrier distributions; Dielectric permittivities; Integration density; Numerical results; Optimized geometries; Rectification efficiency; Self-switching diodes; Technology computer aided design; Electric rectifiers

Digital Object Identifier (DOI)

• 10.7567/JJAP.55.014304

start page

end page

volume

• 55

issue

• 1