abstract

• This work studies the Si-doping of GaAs on (631)-oriented substrates as a function of the As4-beam equivalent pressure (PAs). The electrical properties obtained by Hall effect measurements show that the mobility of the layers grown on (631)-substrates present changes related to carrier compensation processes and the Si-doping changes from p- to n-type when PAs is increased. The optical properties of the samples, as observed by photoluminescence (PL) spectroscopy, modified according to the electrical characteristics. For (631)-samples, when PAs is increased the energy of the maximum intensity PL peak redshifts in the p-type region but, after the threshold of the conduction type conversion, the peak blueshifts in the n-type region. The variation of the PL excitation intensity also shifts the emission energy of the samples as a consequence of the increasing recombination rate for close pairs in donor acceptor pair recombination. Photoluminescence as a function of temperature shows that the activation energy of the PL lines transition is enhanced as PAs is increased. © 2012 American Vacuum Society.

authors

• Cruz Hernández Esteban
• López-López M.
• Méndez García Víctor Hugo
• Shimomura S.
• Vázquez-Cortés D.

publication date

• 2012-01-01

funding provided via

• Consejo Nacional de Ciencia y Tecnología, CONACYT  Grant
• Instituto de Ciencia y Tecnología del Distrito Federal, ICyTDF  Grant

published in

• Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics  Journal

keywords

• Activation energy; Gallium arsenide; Optical properties; Photoluminescence spectroscopy; Semiconducting gallium; Semiconductor doping; Silicon; Beam equivalent pressure; Blueshifts; Carrier compensation; Conduction type; Donor-acceptor-pair recombination; Electrical characteristic; Emission energies; GaAs; GaAs films; Hall effect measurement; Maximum intensities; Optical and electrical properties; P-type; PL excitations; Recombination rate; Red shift; Si-doping; Work study; Electric properties

Digital Object Identifier (DOI)

• 10.1116/1.3687904

start page

end page

volume

• 30

issue

• 2