Investigation of the composition-pulling or lattice-latching effect in LPE Article

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Overview

abstract

• A study of the composition-pulling or lattice-latching effect has been done for the case of GaInP epitaxial layers grown on GaAs and GaInAs substrates. The layers were grown simultaneously on two different substrates placed side by side under the same liquid solution. The layers were characterized by photoluminescence, secondary ion mass spectroscopy (SIMS) and X-ray diffraction. The chemical compositions of the layers were different for samples grown on substrates with different lattice constant. Moreover, the thickness of the epitaxial and of the transition layers also depends on the kind of substrate. © 2005 Elsevier B.V. All rights reserved.

authors

• Asomoza R.
• De Anda Salazar Francisco Javier
• Del P. Rodríguez-Torres M.
• Gorbatchev Andrei
• Hernandez I.C.
• Kudriavtsev Y.
• Mishurnyi V.A.
• Méndez García Víctor Hugo

publication date

• 2005-01-01

funding provided via

• Consejo Nacional de Ciencia y Tecnología, CONACYT  Grant
• Universidad Autónoma de San Luis Potosí, UASLP  Grant

published in

• Journal of Crystal Growth  Journal

Research

keywords

• A1. Solidification; A3. Liquid phase epitaxy; B2. Semiconducting III-V materials Crystal growth; Crystal lattices; Diffusion; Lattice constants; Liquid phase epitaxy; Photoluminescence; Solid solutions; Solidification; Solutions; Supercooling; Thermal effects; X ray diffraction analysis; Composition-pulling; Lattice mismatch; Lattice-latching; Semiconducting III-V materials; Semiconducting gallium compounds

Identity

Digital Object Identifier (DOI)

• 10.1016/j.jcrysgro.2005.01.092

Additional Document Info

start page

• 138

end page

• 142

volume

• 277

issue

• 1-4