Study of internal electric fields in AlGaAs/GaAs two-dimensional electron gas heterostructures
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Modulation-doped GaAs/AlGaAs heterostructures have been studied by photoreflectance spectroscopy. The spectra at room temperature show Franz-Keldysh oscillations associated to the substrate-buffer layer interface. The built-in electric field magnitude calculated from these oscillations is related with the two-dimensional electron gas (2DEG) mobility. In addition we observed two signals associated to the GaAs capping layer and to the 2DEG, respectively. © 2003 Elsevier Science Ltd. All rights reserved.
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Modulation-doped GaAs/AlGaAs heterostructures; Photoreflectance; Two-dimensional electron gas Doping (additives); Electric fields; Electron gas; Electron mobility; Interfaces (materials); Light reflection; Oscillations; Semiconducting aluminum compounds; Semiconducting gallium arsenide; Photoreflectance; Heterojunctions
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