Study of the GaAs growth on pseudomorphic Si layers for the formation of self-assembled quantum dots

Si layers were pseudomorphically grown by MBE on AlGaAs layers, the subsequent growth mode of GaAs was studied as a function of growth temperature, and of the Si layer thickness. At high temperatures (∼580°C), GaAs grows on Si/AlGaAs in a two-dimensional (2D) mode. The use of moderate temperatures (∼500°C) is effective to induce a change to a three-dimensional (3D) growth of GaAs. By employing a Si layer with a thickness of one monolayer, we succeeded to obtain GaAs self-assembled islands with an average lateral size of 20 nm and a height of 1.3 nm, these dimensions are appropriate for the synthesis of quantum dots. © 2002 Elsevier Science B.V. All rights reserved.

A1. Interfaces; A1. Low dimensional structures; A1. Reflection high energy electron diffraction; A3. Molecular beam epitaxy; A3. Quantum dots; A3. Self-assembled; B2. Semiconductors Crystal growth; Interfaces (materials); Molecular beam epitaxy; Monolayers; Reflection high energy electron diffraction; Self assembly; Semiconducting gallium arsenide; Semiconducting silicon; Low dimensional structures; Semiconductor quantum dots

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