abstract

• In this letter, self-switching nanochannels have been proposed as an enabling technology for energy gathering in the terahertz (THz) regime. Such devices combine their diode-like behavior and high-speed of operation in order to generate DC electrical power from high-frequency signals. By using finite-element simulations, we have improved the sensitivity of L-shaped and V-shaped nanochannels based on InAlAs/InGaAs samples. Since those devices combine geometrical effects with their rectifying properties at zero-bias, we have improved their performance by optimizing their shape. Results show nominal sensitivities at zero-bias in the order of 40 V-1 and 20 V-1, attractive values for harvesting applications with square-law rectifiers. © 2015 Author(s).

authors

• Briones E.
• Briones J.
• Cortes Mestizo Irving Eduardo
• Droopad R.
• Hehn M.
• McMurtry S.
• Montaigne F.
• Méndez García Víctor Hugo
• Pérez Caro M.

publication date

• 2015-01-01

published in

• AIP Advances  Journal

keywords

• Rectifying circuits; Attractive value; DC electrical; Enabling technologies; Finite element simulations; Geometrical effect; High frequency signals; Rectifying properties; Self-switching; Finite element method

Digital Object Identifier (DOI)

• 10.1063/1.4936792

start page

end page

volume

• 5

issue

• 11