abstract

• The influence of near surface structure termination and surface treatments on the surface electric fields and mobility of modulation doped AlGaAs/GaAs heterostructures (MDH) were investigated. The built-in and surface electric fields were evaluated by photoreflectance spectroscopy, and these values were utilized to simulate the conduction band bending of the MDH. When the capping layer of the MDH was changed, both the built in internal electric field and the surface electric field are decreased, while the electron mobility of the samples is increased. After passivated the surface samples with Si, the surface electric fields were also reduced. Finally, a (NH4)2S x-based treatment of the surface was applied, the surface electric field is annulled, and the conduction band modeling showed an important redistribution of carriers in the films. The electron mobility of the passivated samples does not show any change, neither the internal electric fields, corroborating the close relationship that exist between these two parameters. © 2014 American Vacuum Society.

authors

• Balderas Navarro Raúl Eduardo
• Cisneros-De-La-Rosa A.
• Cortés Mestizo Irving Eduardo
• Cruz Hernández Esteban
• González-Fernández J.V.
• Gorbatchev Andrei
• López-López M.
• Méndez García Víctor Hugo
• Zamora-Peredo L.

publication date

• 2014-01-01

published in

• Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics  Journal

keywords

• Conduction bands; Electric properties; Electron mobility; Heterojunctions; Modulation; Passivation; Aluminum gallium arsenide; Conduction bands; Electron absorption; Electron mobility; Heterojunctions; Modulation; Passivation; AlGaAs/GaAs; Capping layer; Internal electric fields; Modulation-doped; Photoreflectance spectroscopy; Surface electric fields; Surface sample; Two parameter; Electric fields; Electric fields

Digital Object Identifier (DOI)

• 10.1116/1.4863677

start page

end page

volume

• 32

issue

• 2