abstract

• We report on the self-assembly of large-order-correlated nanoscale faceting on GaAs(631)A substrates grown by molecular beam epitaxy. The surface morphology of the grown samples as a function of the growth temperature and the As-beam equivalent pressure was studied using atomic force microscopy. A two-dimensional autocorrelation function analysis was performed in order to quantitatively determine the uniformity of the surface corrugation. By optimizing the growth conditions, correlated faceted areas as large as 1.7 × 1.7 μm 2 are obtained. The highly ordered surface corrugation discussed here provides useful insights to prepare highly ordered facet planes for the self organized growth of quantum wires. © 2012 American Institute of Physics.

authors

• Cruz Hernández Esteban
• Méndez García Víctor Hugo
• Shimomura S.

publication date

• 2012-01-01

funding provided via

• Consejo Nacional de Ciencia y Tecnología, CONACYT  Grant

published in

• Applied Physics Letters  Journal

keywords

• Autocorrelation function analysis; Equivalent pressure; GaAs; Growth conditions; Homoepitaxial growth; Nano scale; Nanoscale faceting; Self organized growth; Self-assembled; Surface corrugations; Atomic force microscopy; Epitaxial growth; Molecular beam epitaxy; Nanotechnology; Regression analysis; Semiconducting gallium; Two dimensional; Gallium arsenide

Digital Object Identifier (DOI)

• 10.1063/1.4746423

start page

end page

volume

• 101

issue

• 7