abstract

• We present an experimental study of the terahertz emission from InxGa1−xAs epitaxial layers that were grown while varying the alloy fraction x. We observe the terahertz emission that is significantly different depending on the variation direction of the alloy fraction. We attribute the difference to the significant change of the band bending induced in the growth direction and to the position-dependent variation of the effective mass. © 2021 Author(s).

authors

• Belio-Manzano A.
• Méndez García Víctor Hugo

publication date

• 2021-01-01

funding provided via

• Alexander von Humboldt-Stiftung, AvH; Consejo Nacional de Ciencia y Tecnología, CONACYT: 131931, 294440  Grant

published in

• Applied Physics Letters  Journal

keywords

• Electromagnetic wave emission; Gallium alloys; Indium alloys; Semiconducting indium gallium arsenide; Semiconductor alloys; Alloy fraction; Band bendings; Effective mass; Growth directions; Position dependents; Terahertz emissions; Terahertz waves

Digital Object Identifier (DOI)

• 10.1063/5.0061918

PubMed ID

start page

end page

volume

• 119

issue

• 17