Improvement on the InAs quantum dot size distribution employing high-temperature GaAs(100) substrate treatment
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Annealing; Atomic force microscopy; Molecular beam epitaxy; Monolayers; Photoluminescence; Reflection high energy electron diffraction; Semiconducting gallium arsenide; Semiconductor doping; Semiconductor quantum dots; Transmission electron microscopy; Random size distribution; Specular beam intensity; Stranski-Krastanov (SK) growth mode; Wetting layer (WL); Semiconducting indium compounds
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