abstract

• In the present work, we study the growth by molecular beam epitaxy of InAs self-assembling quantum dots (SAQDs) on GaAs(100) substrates subjected to an in situ annealing treatment. The annealing process consists of the exposition of the GaAs buffer layer surface to high temperatures for a few seconds with the shutter of an arsenic Knudsen cell closed. The purpose of the annealing is to obtain a better uniformity of the SAQD sizes. In our study we prepared different samples using the Stranski-Krastanov growth method to obtain InAs/GaAs(100) quantum dot samples with different annealing times and temperatures. Their structural and optical properties were studied by reflection high-energy electron diffraction (RHEED), high-resolution scanning electron microscopy (HRSEM), atomic force microscopy (AFM), and photoreflectance spectroscopy (PR). According to the results of AFM and HRSEM, by the thermal treatment we obtained a better distribution of quantum dot sizes in comparison with a reference sample with no treatment. The PR spectra from 0.9 to 1.35eV presented two transitions associated with SAQDs. The energy transitions were obtained by fitting the PR spectra using the third derivative model. © 2010 IOP Publishing Ltd.

authors

• Contreras-Guerrero R.
• López-López M.
• Martínez-Velis I.
• Mejía-García C.
• Morales-Cortés H.
• Méndez García Víctor Hugo
• Ramírez-Lopez M.
• Rojas-Ramirez J.-S.
• Vzquez-Cortés D.

publication date

• 2010-01-01

published in

• Nanotechnology  Journal

keywords

• AFM; Annealing process; Derivative models; Energy transitions; GaAs; GaAs(1 0 0); High temperature; High-resolution scanning electron microscopies; In-situ annealing; InAs; InAs quantum dots; InAs/GaAs; Knudsen cell; Photoreflectance spectroscopy; Quantum Dot; Quantum-dot size; Self-assembling; Stranski-Krastanov growth; Structural and optical properties; Thermal treatment; Annealing; Arsenic; Atomic force microscopy; Atomic spectroscopy; Crystal growth; Gallium alloys; Gallium arsenide; High resolution electron microscopy; Molecular beam epitaxy; Molecular beams; Optical properties; Optical waveguides; Reflection high energy electron diffraction; Scanning electron microscopy; Semiconducting gallium; Semiconducting indium; Semiconductor quantum wires; Semiconductor quantum dots

Digital Object Identifier (DOI)

• 10.1088/0957-4484/21/13/134012

start page

end page

volume

• 21

issue

• 13