abstract

• We report SnO2, CdS, and ZnS multilayer thin films structure synthesized on glass substrates using the SILAR method to produce an n-n homopolar junction as an emitter layer. A reaction mechanism is proposed to explain the several interactions between the precursors on each film layer. Scanning electron microscopy, Raman spectroscopy, and Grazing incidence X-ray diffraction determinate a polycrystalline nature, uniform substrate coverage, and a reasonable number of imperfections. The optical transmittance data obtained in addition with the I-V curve analysis give necessary information about optoelectrical properties of the material growth made on the substrate as a n-n homopolar junction.

authors

• Durón-Torres S.M.
• Méndez García Víctor Hugo

publication date

• 2024-01-01

published in

• MRS Communications  Journal

keywords

• Chemical synthesis; Optoelectronic; Thin films; Semiconducting CHEMICAL BATH DEPOSITION; IONIC LAYER ADSORPTION; CDS THIN-FILMS; HYDROGEN GENERATION; N/N JUNCTION; ZNS; PHOTOLUMINESCENCE; TEMPERATURE; DISORDER; RAMAN

Digital Object Identifier (DOI)

• 10.1557/s43579-023-00493-5

PubMed ID

start page

• 41

end page

• 47

volume

• 14

issue

• 1