Magnetic properties of GaAs:Mn self-assembled nanostructures grown at relatively high-temperature by Molecular Beam Epitaxy
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We report the influence of the Mn atomic concentration (at.%25) on the nanostructures formation and magnetic properties of GaAs:Mn layers grown by Molecular Beam Epitaxy at a relatively high substrate temperature of 530 °C varying the nominal Mn at.%25 content from 0.01 to 0.2. It is shown that by modifying the Mn at.%25 different kind of nanostructures, ranging from 2D (such as islands and surface corrugation) to 3D microleave- and nanowire-like arrays, form on the surface layer. Samples produced with Mn contents ranging from 0.02 to 0.20 at.%25 show a significant room temperature ferromagnetic response that is attributed to the formation of MnAs nanocrystals as confirmed from X-ray diffraction analysis and magnetization measurements. The influence of MnAs clusters on the formation of the nanostructures observed is discussed. © 2018 Elsevier B.V.
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Diluted magnetic semiconductor; Magnetic cluster; Nanostructures; Self-assembly Diluted magnetic semiconductors; Gallium arsenide; III-V semiconductors; Magnetic properties; Magnetic semiconductors; Magnetism; Manganese; Molecular beam epitaxy; Molecular beams; Nanostructures; Self assembly; Semiconducting gallium; X ray powder diffraction; Atomic concentration; Ferromagnetic response; High substrate temperature; High temperature; Magnetic cluster; Magnetization measurements; Self assembled nanostructures; Surface corrugations; Manganese compounds
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