Ag-N dual acceptor doped p-type ZnO thin films by DC reactive magnetron co-sputtering
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ZnO p-type thin films were deposited by dual acceptor co-doping using nitrogen and silver via DC reactive magnetron co-sputtering. As precursor material were used a Zn and an Ag metallic targets with a purity of 99.99%25. X-ray energy dispersive spectroscopy (EDX) confirmed the presence of Ag and N in ZnO: Ag,N films. The electrical properties were explored by Hall Effect measurement and showed a low hole concentration for the as-deposited ZnO: Ag,N film. However, after annealing treatment, the films remained p-type and the electrical properties were improved significantly. The best electrical properties showed a low resistivity of 8.56×10−3 Ωcm, Hall mobility of 23 cm2/Vs and a very high hole concentration of 3.17×1019 cm−3. © 2016 Elsevier B.V.
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Ag-n doping zno; Co-sputtering; High hole concentration; P-type zno Energy dispersive spectroscopy; Hall mobility; Hole concentration; Hole mobility; Magnetrons; Metallic films; Semiconductor doping; Sputter deposition; Sputtering; Thin films; Zinc oxide; Annealing treatments; Cosputtering; Hall effect measurement; Low hole concentration; N-Doping; P type ZnO; Reactive magnetron co-sputtering; X-ray energy dispersive spectroscopy; Silver
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