Hyperbolic-tangent composition-graded InxGa1-xAs/GaAs (100) structures grown by molecular beam epitaxy Article uri icon

abstract

  • The molecular beam epitaxial growth and physical properties of In graded-composition layers of InGaAs on GaAs (100) substrates varying nominal In concentration from 12 to 97%25 and vice versa is analyzed along the growth front. The substrate temperature was varied as the In concentration was changed in order to propitiate the near-optimal growth conditions for the InGaAs alloy. Hyperbolic-tangent compositional gradients, from In-rich to Ga-rich alloys and vice versa, observed RHEED patterns characteristic of a flat surface during the growth. The HRXRD patterns showed clear diffraction peaks associated with the In concentration alloy at which the graded sample started, followed by a characteristic plateau of graded layers. The occurrence of dislocations in hyperbolic tangent gradients that relieve the strain up to a certain thickness is explored, reaching a nominal or an averaged lattice constant. © 2022 Elsevier Ltd

publication date

  • 2022-01-01