Photoluminescence and Raman Spectroscopy Studies of Carbon Nitride Films
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Amorphous carbon nitride films with N/C ratios ranging from 2.24 to 3.26 were deposited by reactive sputtering at room temperature on corning glass, silicon, and quartz as substrates. The average chemical composition of the films was obtained from the semiquantitative energy dispersive spectroscopy analysis. Photoluminescence measurements were performed to determine the optical band gap of the films. The photoluminescence spectra displayed two peaks: one associated with the substrate and the other associated with C N x films located at ≈ 2.13 ± 0.02 eV. Results show an increase in the optical band gap from 2.11 to 2.15 eV associated with the increase in the N/C ratio. Raman spectroscopy measurements showed a dominant D band. I D / I G ratio reaches a maximum value for N/C ≈ 3.03 when the optical band gap is 2.12 eV. Features observed by the photoluminescence and Raman studies have been associated with the increase in the carbon sp2/sp3 ratio due to presence of high nitrogen content. © 2016 J. Hernández-Torres et al.
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Amorphous carbon; Amorphous films; Amorphous silicon; Carbon nitride; Chemical analysis; Energy dispersive spectroscopy; Energy gap; Nitrides; Optical band gaps; Photoluminescence; Raman spectroscopy; Reactive sputtering; Substrates; Amorphous carbon nitride films; Carbon nitride films; Chemical compositions; High nitrogen content; Photoluminescence and Raman spectroscopy; Photoluminescence measurements; Photoluminescence spectrum; Raman spectroscopy measurements; Carbon films; glass; silicon; silicon dioxide; Article; carbon nitride film; chemical composition; film; flow measurement; photoluminescence; Raman spectrometry; room temperature; spectrometer
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