Study of the initial growth process of ZnSe on Si(111) by molecular beam epitaxy

Reflection high-energy electron diffraction, atomic force microscopy, and Auger spectroscopy were used to study the initial stages of growth of ZnSe on Si(111) substrates by molecular beam epitaxy. Initially, ZnSe grows in a three dimensional mode: after 7 monolayers (ML) of depositon the islands height is ∼20 Å, with a diameter of ∼650 Å, and a density of ∼20 islands per μm2. Around ∼10 ML of deposition the growth changes to a two dimensional mode, and finally, a flat ZnSe surface is obtained for ∼30 ML. The island formation at the initial stage of growth could be used to synthesize self assembling ZnSe-quantum dots. On the other hand, the fast change to a two dimensional growth mode is very useful for structures requiring a flat surface.

Atomic force microscopy; Auger spectroscopy; Molecular beam epitaxy; Quantum dots; Reflection high-energy electron diffraction; Si; ZnSe Atomic force microscopy; Auger electron spectroscopy; Density (specific gravity); Deposition; Molecular beam epitaxy; Monolayers; Reflection high energy electron diffraction; Semiconducting silicon; Semiconducting zinc compounds; Semiconductor growth; Semiconductor quantum dots; Substrates; Zinc selenide; Semiconducting films

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