Molecular beam epitaxial growth of GaAs on (631) oriented substrates Article uri icon

abstract

  • The homoepitaxy of GaAs on (631)-oriented substrates has been studied as a function of the growth temperature. We observed the spontaneous formation of a high density of large scale features on the surface. The hilly like features are elongated towards the [-5, 9, 3] direction. When the growth temperature was varied from 490 to 580°C the hillocks length exponentially increases from 1.8 to 4.3 μm, their height linearly increases from 35 to 50 nm, and the density exponentially decreases from 2.8 × 106 to 3 × 105/cm2. The hillocks formation is discussed in terms of adatoms diffusion anisotropy, sticking properties at step edges, and Ehrlich-Schwoebel diffusion barriers. © 2005 The Japan Society of Applied Physics.

publication date

  • 2005-01-01