Si substrate treatment with nitrogen for molecular beam epitaxial growth of ZnSe Article uri icon

abstract

  • The authors have achieved a substantial improvement in the ZnSe molecular beam epitaxy of Si(111) by irradiating the substrate surface with a flux of nitrogen free radicals (N *) prior to growth. This new substrate treatment induced an initial two-dimensional growth as revealed by reflection high-energy electron diffraction, Auger electron spectroscopy, and atomic force microscopy. The improved epitaxy was confirmed by high resolution x-ray diffraction.

publication date

  • 1998-01-01