In situ monitoring of the 2D-3D growth-mode transition in In 0.3 Ga 0.7 As/GaAs (0 0 1) by reflectance-difference spectroscopy
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We report on in situ RD measurements of In 0.3 Ga 0.7 As/GaAs epitaxial layers, 0-75 Å thick, grown by Molecular Beam Epitaxy (MBE) on GaAs (0 0 1). A plot of the amplitude of the RD spectrum at 2.5 eV versus epilayer thickness shows that it rises sharply when a film thickness of about 38 Å is reached. Comparison with RHEED measurements shows that such rise correlates well to the onset of 3D growth. RD line shape calculations show that the experimental RD line shapes can be described on the basis of InGaAs islands under an anisotropic strain. Results presented here show the high potential of RD spectroscopy as an in situ probe to the study of In 0.3 Ga 0.7 As/GaAs growth processes. © 2003 Elsevier B.V. All rights reserved.
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3D-growth; Heterointerface; InGaAs; Reflectance anisotropy; Strain relaxation Anisotropy; Composition; Molecular beam epitaxy; Reflection high energy electron diffraction; Semiconducting films; Spectroscopic analysis; Strain; Surface phenomena; Reflectance spectroscopy; Strain relaxation; Semiconducting indium gallium arsenide
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