Two-dimensional growth mode promotion of ZnSe on Si(1 1 1) by using a nitrogen substrate surface treatment Article uri icon

abstract

  • The growth mode of ZnSe epilayers prepared by pulsed molecular beam epitaxy (MBE) on Si(1 1 1) substrates, irradiated with a plasma of nitrogen (N-plasma) prior to the deposition, was compared to that of ZnSe epilayers prepared by conventional MBE directly on untreated Si substrates. Spotty reflection high-energy electron diffraction (RHEED) patterns with a diffuse background were observed during the initial stages of the conventional MBE growth. In sharp contrast, the RHEED patterns during the pulsed MBE growth on the N-plasma treated Si surface showed very well-defined streaks, and moreover a two-fold reconstruction was observed indicating an atomically flat surface. A strong evidence of the improved epitaxy, and the two-dimensional nucleation obtained by this technique was the clear presence of large amplitude RHEED oscillations. AFM images confirmed a flatter ZnSe surface for this sample.

publication date

  • 1999-01-01