Study of the conduction-type conversion in Si-doped (631)A GaAs layers grown by molecular beam epitaxy Article uri icon

abstract

  • We report the Si-doping of GaAs (631)A layers grown by molecular beam epitaxy under different As overpressure. From Hall effect measurements, we have found that the increase of the As pressure induces conduction conversion from p- to n-type, which is presumably related to lattice site switching of Si occupying an As site (where Si is acceptor) to a Ga site (where Si acts as a donor). This conversion is also studied by photoluminescence (PL) spectroscopy. The sharp conductivity conversion, at a critical As pressure value of 1.4-1.7 x 10-5 mbar is reflected in the optical properties of the samples by a change of As vacancy defects into pairs of Ga vacancy and Ga antisite defects. © 2011 WILEY-VCH Verlag GmbH %26amp; Co. KGaA, Weinheim.
  • We report the Si-doping of GaAs (631)A layers grown by molecular beam epitaxy under different As overpressure. From Hall effect measurements, we have found that the increase of the As pressure induces conduction conversion from p- to n-type, which is presumably related to lattice site switching of Si occupying an As site (where Si is acceptor) to a Ga site (where Si acts as a donor). This conversion is also studied by photoluminescence (PL) spectroscopy. The sharp conductivity conversion, at a critical As pressure value of 1.4-1.7 x 10-5 mbar is reflected in the optical properties of the samples by a change of As vacancy defects into pairs of Ga vacancy and Ga antisite defects. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

publication date

  • 2011-01-01