AFM and FTIR characterization of microcrystalline Si obtained from isothermal annealing of Al/a-Si:H
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Atomic force microscopy and Fourier transform infrared spectroscopy were used to investigate the morphology of the microcrystalline surface, and also the amorphous-crystalline structural transformation of a-Si: H films, isothermally annealed during several hours. Crystallization process was strongly influenced by the deposition of an Al layer on the surface of a-Si:H samples. Representative AFM images show the presence of grains, which increase in diameter with the annealing time. Relative crystallized fraction as a function of the annealing time can be described adequately by using the Avrami equation. The kinetic of this crystallization process suggest a two-dimensional growth of the Si nuclei. Fourier transform infrared measurements show the presence of an intense band near 512 cm -1 associated to Si-Si bonding. We observed the relative diminishing of the intensity of the Si-H wagging mode at 694 cm -1 with annealing time, suggesting effusion of hydrogen to the surface of microcrystalline films. © 2007 WILEY-VCH Verlag GmbH %26amp; Co. KGaA.
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Al layer; Amorphous; Avrami equation; Si-Si bonding; Atomic force microscopy; Crystallization; Fourier transform infrared spectroscopy; Isothermal annealing; Microcrystalline silicon; Morphology; Silanes
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