selected publications
-
article
- Evaluation of nanoindentation characteristics of cubic InN epilayer grown by Molecular Beam Epitaxy. Thin Solid Films. 736:-. 2021-01-01
- Molecular dynamics simulation of cubic InxGa(1-x)N layers growth by molecular beam epitaxy. Computational Materials Science. 193:-. 2021-01-01
- Critical thickness as a function of the indium molar fraction in cubic InXGa1-XN and the influence in the growth of nanostructures. Materials Science in Semiconductor Processing. 115:-. 2020-01-01
- Elastic modulus and hardness of cubic GaN grown by molecular beam epitaxy obtained by nanoindentation. Thin Solid Films. 699:-. 2020-01-01
- Effects of Mg incorporation in cubic GaN films grown by PAMBE near Ga rich conditions. Materials Science in Semiconductor Processing. 93:196-200. 2019-01-01
- Magnetic properties of GaAs:Mn self-assembled nanostructures grown at relatively high-temperature by Molecular Beam Epitaxy. Journal of Magnetism and Magnetic Materials. 475:715-720. 2019-01-01
- Bending stability of GaN grown on a metallic flexible substrate by plasma-assisted molecular beam epitaxy. Materials Research Express. 4:-. 2017-01-01
- Bias Dependence of the Electrical Spin Injection into GaAs from Co-Fe- B/MgO Injectors with Different MgO Growth Processes. Physical Review Applied. 8:-. 2017-01-01
- Complex refractive index of InXGa1-XN thin films grown on cubic (100) GaN/MgO. Thin Solid Films. 626:55-59. 2017-01-01
- Growth of HfO2/TiO2 nanolaminates by atomic layer deposition and HfO2-TiO2 by atomic partial layer deposition. Journal of Applied Physics. 121:-. 2017-01-01
- Thickness and photocatalytic activity relation in TiO2:N films grown by atomic layer deposition with methylene-blue and E. coli bacteria. Bulletin of Materials Science. 40:1225-1230. 2017-01-01
- Cubic GaN films grown below the congruent sublimation temperature of (0 0 1) GaAs substrates by plasma-assisted molecular beam epitaxy. Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34:-. 2016-01-01
- Effects of growth temperature on the incorporation of nitrogen in GaNAs layers. Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34:-. 2016-01-01
- Hyperfine coupling of hole and nuclear spins in symmetric (111)-grown GaAs quantum dots. Physical Review B. 94:-. 2016-01-01
- Magnetospectroscopy of excited states in charge-tunable GaAs/AlGaAs [111] quantum dots. Physical Review B. 93:-. 2016-01-01
- Multiwall carbon nanotubes/polycaprolactone scaffolds seeded with human dental pulp stem cells for bone tissue regeneration. Journal of Materials Science: Materials in Medicine. 27:1-12. 2016-01-01
- Structural characterization of AlGaAs:Si/GaAs (631) heterostructures as a function of As pressure. Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34:-. 2016-01-01
- Tuning emission in violet, blue, green and red in cubic GaN/InGaN/GaN quantum wells. Journal of Crystal Growth. 435:110-113. 2016-01-01
- Bulk lattice parameter and band gap of cubic InXGa1-XN (001) alloys on MgO (100) substrates. Journal of Crystal Growth. 418:120-125. 2015-01-01
- Determination of the Thermal Expansion Coefficient of Single-Wall Carbon Nanotubes by Raman Spectroscopy. Spectroscopy Letters. 48:139-143. 2015-01-01
- Exciton states in monolayer MoSe2: Impact on interband transitions. 2D Materials. 2:-. 2015-01-01
- Giant Enhancement of the Optical Second-Harmonic Emission of WSe2 Monolayers by Laser Excitation at Exciton Resonances. Physical Review Letters. 114:-. 2015-01-01
- Raman scattering from Ge1-xSnx (x ≤ 0:14) alloys. Revista Mexicana de Fisica. 61:437-443. 2015-01-01
- Charge tuning in [111] grown GaAs droplet quantum dots. Applied Physics Letters. 105:-. 2014-01-01
- Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods. Applied Physics Letters. 105:-. 2014-01-01
- Exciton dynamics in WSe2 bilayers. Applied Physics Letters. 105:-. 2014-01-01
- High-quality InN films on MgO (100) substrates: The key role of 30° in-plane rotation. Applied Physics Letters. 104:-. 2014-01-01
- Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector. Physical Review B - Condensed Matter and Materials Physics. 90:-. 2014-01-01
- Valley dynamics probed through charged and neutral exciton emission in monolayer WSe2. Physical Review B - Condensed Matter and Materials Physics. 90:-. 2014-01-01
- Functionalization of nitrogen-doped carbon nanotubes with gallium to form Ga-CN x-multi-wall carbon nanotube hybrid materials. Nanotechnology. 23:-. 2012-01-01
- Growth and characterization of β-InN films on MgO: The key role of a β-GaN buffer layer in growing cubic InN. Revista Mexicana de Fisica. 58:144-151. 2012-01-01
- Self-assembly of β-GaN/MgO nanobars. Advanced Science Letters. 16:229-236. 2012-01-01
- Effect of hydrogen concentration on the bolometric performance of sputtered a-SixGe1 - X:H films. Thin Solid Films. 519:6522-6524. 2011-01-01
- High-sensitivity bolometers from self-oriented single-walled carbon nanotube composites. ACS Applied Materials and Interfaces. 3:3200-3204. 2011-01-01
- Photoluminescence and secondary ion mass spectrometry study of layer-by-layer grown Zn1-xCdxSe quantum wells. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29:-. 2011-01-01
- Critical thickness of Β -InN/GaN/MgO structures. Journal of Applied Physics. 107:-. 2010-01-01
- Infrared study of the absorption edge of β-InN films grown on GaN/MgO structures. Journal of Applied Physics. 108:-. 2010-01-01
- Liquid crystal behavior of single wall carbon nanotubes. Carbon. 48:3531-3542. 2010-01-01
- In situ measurements of the critical thickness for strain relaxation in β-GaN/MgO structures. Journal of Crystal Growth. 311:1302-1305. 2009-01-01
- Infrared reflectance anisotropy of wurzite GaN. Journal of Applied Physics. 106:-. 2009-01-01
- Low energy shifted photoluminescence of Er3%2b incorporated in amorphous hydrogenated silicon-germanium alloys. Journal of Non-Crystalline Solids. 355:976-981. 2009-01-01
- Controlling the dimensions, reactivity and crystallinity of multiwalled carbon nanotubes using low ethanol concentrations. Chemical Physics Letters. 453:55-61. 2008-01-01
- On the doping problem of CdTe films: The bismuth case. Thin Solid Films. 516:7013-7015. 2008-01-01
- Nonlinear behavior of the energy gap in Ge1-x Snx alloys at 4 K. Applied Physics Letters. 91:-. 2007-01-01
- In-plane and out-of-plane lattice parameters of [1 1 n] epitaxial strained layers. Journal of Crystal Growth. 291:340-347. 2006-01-01
- Lattice vibrations study of Ga1-xInxAs ySb1-y quaternary alloys with low (In, As) content grown by liquid phase epitaxy. Journal of Physics: Conference Series. 28:147-150. 2006-01-01
- Structural and optical characterization of GaNAs layers grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24:1591-1594. 2006-01-01
-
Determination of the optical energy gap of Ge1-xSnx alloys with 0
- An interface clusters mixture model for the structure of amorphous silicon monoxide (SiO). Journal of Non-Crystalline Solids. 320:255-280. 2003-01-01
- Characterization of GaAs grown by the close-spaced vapor transport technique, using atomic hydrogen as the reactant. Physica Status Solidi (A) Applied Research. 198:289-296. 2003-01-01
- Ge1-xSnx alloys pseudomorphically grown on Ge(001). Applied Physics Letters. 83:4942-4944. 2003-01-01
- Raman studies of aluminum induced microcrystallization of n%2b Si:H films produced by PECVD. Thin Solid Films. 445:32-37. 2003-01-01
- The forward time projection chamber in STAR. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 499:713-719. 2003-01-01
- Influence of growth direction on order-disorder transition in (GaAs)1-x(Si2)x alloys. Physical Review B - Condensed Matter and Materials Physics. 65:333081-333084. 2002-01-01
- Influence of growth direction on order-disorder transition in (formula presented) alloys. Physical Review B - Condensed Matter and Materials Physics. 65:1-4. 2002-01-01
- Structural characterization of semi-strained layer (GaAs)1-x(Si2)x/GaAs multilayers grown by magnetron sputtering. Thin Solid Films. 416:49-53. 2002-01-01
- Structural study of ZnSe films grown on substrate with InxGa1-xAs and Al1-xGaxAs buffer layers: Strain, relaxation and lattice parameter. Journal of Physics D: Applied Physics. 35:1408-1413. 2002-01-01
- Growth of strained-layer GaAs/Ge superlattices by magnetron sputtering: Optical and structural characterization. Journal of Applied Physics. 89:3209-3214. 2001-01-01
- Physical properties of (GaAs)1 − x(Ge2)x: Influence of growth direction. Physical Review B - Condensed Matter and Materials Physics. 63:-. 2001-01-01
- Raman scattering study of (GaAs)1-x(Si2)x alloys epitaxially grown on GaAs. Journal of Applied Physics. 90:4977-4980. 2001-01-01
- Characterization of ZnSe films grown on GaAs substrates with InxGa1-xAs and AlxGa1-xAs buffer layers. Thin Solid Films. 373:37-40. 2000-01-01
- Dependence on the atmosphere of preparation of the Iuminescence of spark processed porous GaAs. Journal of Applied Physics. 87:1270-1275. 2000-01-01
- Influence of growth direction on order-disorder transition in (GaAs)1-x(Ge)2x semiconductor alloys. Applied Physics Letters. 77:2497-2499. 2000-01-01
- Long-range order-disorder transition in (GaAs)1-x(Ge2)x grown on GaAs(001) and GaAs(111). Microelectronics Journal. 31:439-441. 2000-01-01
- Raman scattering study of photoluminescent spark-processed porous InP. Thin Solid Films. 379:1-6. 2000-01-01
- Reduction in the crystal defect density of ZnSe layers grown by molecular beam epitaxy. Revista Mexicana de Fisica. 46:148-152. 2000-01-01
- Dislocations in MBE-grown ZnSe/GaAs(001) epitaxial layers. Diffusion and Defect Data. Pt A Defect and Diffusion Forum. 173:31-46. 1999-01-01
- Epitaxial Growth of Strained Ge Films on GaAs(001). Thin Solid Films. 352:269-272. 1999-01-01
- Model for the linear electro-optic reflectance-difference spectrum of gaas(001) around (formula presented) and (formula presented). Physical Review B - Condensed Matter and Materials Physics. 59:10234-10239. 1999-01-01
- Near band-edge optical properties of GaAs at interfaces of ZnSe/GaAs/ GaAs by phase selection in photoreflectance. Journal of Applied Physics. 86:425-429. 1999-01-01
- Observation of zinc-blende to diamond transition in metastable (GaAs)1-x(Ge2)x alloys by Raman scattering. Solid State Communications. 109:295-300. 1999-01-01
- Processing of porous GaAs at low frequency sparking. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 17:624-629. 1999-01-01
- Strain in GaAs at the heterointerface of ZnSe/GaAs/GaAs. Journal of Physics D: Applied Physics. 32:1293-1301. 1999-01-01
- Stress in GaAs at the hetero-interface of ZnSe/GaAs/GaAs: A possible effect of pit filling and difference in thermal expansion coefficients. Applied Surface Science. 151:271-279. 1999-01-01
- Structural study of metastable (GaAs)1-x(Ge2)x thin films grown by RF magnetron sputtering. Journal of Crystal Growth. 197:783-788. 1999-01-01
- Dislocation densities in MBE grown ZnSe epitaxial layers on GaAs by HRXRD. Journal of Crystal Growth. 194:301-308. 1998-01-01
- Excitonic transitions in (GaAs)1-x(Ge2)x/GaAs multilayers grown by magnetron sputtering. Applied Physics Letters. 72:94-96. 1998-01-01
- Influence of ion sputtering on the surface topography of GaAs. Applied Surface Science. 126:205-212. 1998-01-01
- Luminescence of spark processed porous InP. Thin Solid Films. 322:282-289. 1998-01-01
- Observation of stress effects on GaAs at the interface of molecular beam epitaxy grown ZnSe/GaAs(100) heterostructures. Applied Surface Science. 134:95-102. 1998-01-01
- Optical and structural characterization of ZnSe films grown by molecular beam epitaxy on GaAs substrates with and without GaAs buffer layers. Journal of Applied Physics. 84:1551-1557. 1998-01-01
- Electron spin resonance on a two-dimensional electron gas. Physical Review B - Condensed Matter and Materials Physics. 56:R4359-R4362. 1997-01-01
- Optical characterization of vacuum evaporated cadmium sulfide films. Thin Solid Films. 305:345-350. 1997-01-01
- Refractive indices of zincblende structure β-GaN(001) in the subband-gap region (0.7-3.3 eV). Applied Physics Letters. 68:441-443. 1996-01-01
- Temperature dependence of the band gap of Cd1-xZnxTe alloys of low zinc concentrations. Journal of Applied Physics. 79:7713-7717. 1996-01-01
- Refractive indices of zincblende structure β-GaN(001) in the subband-gap region (0.7-3.3 eV). Applied Physics Letters. 19-. 1995-01-01
- Monte Carlo simulation of the transport process in the growth of a-Si:H prepared by cathodic reactive sputtering. Journal of Applied Physics. 67:477-482. 1990-01-01
- Hydrogen detection in hydrogenated amorphous silicon by ion-induced Auger spectroscopy. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 7:2625-2627. 1989-01-01
- Thermal annealing effects on amorphous radio frequency sputtered Cd 0.95 Fe 0.0 5 Te thin films. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 5:1798-1801. 1987-01-01
-
chapter
- Growth of InN and In-rich Group III-nitride alloys in cubic phase. Crystal Growth: Theory, Mechanisms and Morphology. 125-154. 2012-01-01
-
conference paper
- Structural and optical properties of Ge1-xSnx alloys grown on GaAs (001) by R. F. magnetron sputtering. ECS Transactions. 393-400. 2014-01-01
- The effect of the in concentration on the surface morphology of InGaAs-GaAs heterostructures grown by MBE on GaAs substrate. Journal of Physics: Conference Series. -. 2014-01-01
- Ge1-xSnx alloys pseudomorphically grown on Ge (001) by sputtering. ECS Transactions. 413-417. 2012-01-01
- AFM and FTIR characterization of microcrystalline Si obtained from isothermal annealing of Al/a-Si:H. Physica Status Solidi (A) Applications and Materials Science. 1014-1017. 2007-01-01
- Characterization of sputtered Ge-Sn thin films by high resolution methods. Microscopy and Microanalysis. 712-713. 2006-01-01
- Effect of structural imperfections on luminescence of ZnCdSe/ZnSe quantum wells. Journal of Alloys and Compounds. 202-205. 2004-01-01
- Study of the optical and structural properties of GaN films grown on Si substrates with a SiC layer. Thin Solid Films. 68-72. 2003-01-01
- Effects of the substrate tilting angle on the molecular beam epitaxial growth of GaAs on Si(110). Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1567-1571. 2001-01-01
- Raman study of luminescent spark processed porous GaAs. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 622-627. 2001-01-01
- Study of stoichiometric and non-stoichiometric cadmium selenide thin films. Modern Physics Letters B. 741-744. 2001-01-01
- Study of the crystal quality and Ga-segregation in ZnSe films grown by molecular beam epitaxy on AlxGa1-xAs and InxGa1-xAs buffer layers on GaAs substrates. Journal of Crystal Growth. 639-644. 2001-01-01