Ge1-xSnx alloys pseudomorphically grown on Ge (001) by sputtering Conference Paper

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Overview

abstract

• Ge1-xSnx alloys were grown on Ge(001) and GaAs(001) substrates in a conventional R. F. sputtering system with two independents plasmas not simultaneous focus to substrate. We determined the inplane and in-growth lattice parameters, as well as the alloy bulk lattice parameter of the alloys for different Sn concentrations by high resolution x-ray diffraction. At low concentrations, we observed that Ge1-xSnx layers have pseudomorphic characteristics. We also determine the band gap of these alloys from transmittance measurements at different temperatures, using a fast-Fouriertransform infrared interferometer. Our results show that the change from indirect to direct band gap it is observed to lie between 0.10< xc < 0.13. © The Electrochemical Society.

authors

• Navarro Contreras Hugo Ricardo
• Pérez Ladrón De Guevara H.
• Rodríguez Vázquez Ángel Gabriel
• Vidal Borbolla Miguel Angel

publication date

• 2012-01-01

published in

• ECS Transactions  Proceedings

Research

keywords

• Alloy bulks; Direct band gap; High resolution X ray diffraction; Infrared interferometers; Low concentrations; Sn concentration; Sputtering systems; Transmittance measurements; Energy gap; Germanium; Lattice constants; Silicon alloys; Substrates; Tin; X ray diffraction; Tin alloys

Identity

Digital Object Identifier (DOI)

• 10.1149/05009.0413ecst

Additional Document Info

start page

• 413

end page

• 417

volume

• 50

issue

• 9