abstract

• Quantum wells of Zn1-xCdxSe can be grown in a layer-by-layer mode by submonolayer pulsed beam epitaxy (SPBE). The authors present the results of the characterization of a sample containing three quantum wells with different Cd contents produced without interrupting the growth process or changing the effusion cell temperatures. The quantum wells exhibit intense and narrow excitonic emission. Information about their structure and composition was obtained by means of low temperature photoluminescence and secondary ion mass spectrometry. A very good agreement was observed between both techniques, demonstrating that SPBE offers a great control of quantum well thickness and composition. © 2011 American Vacuum Society.

authors

• García-Vázquez M.
• Hernández-Calderón I.
• Hernández-Ramírez L.M.
• Vidal Borbolla Miguel Angel

publication date

• 2011-01-01

published in

• Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics  Journal

keywords

• Photoluminescence; Secondary emission; Secondary ion mass spectrometry; Semiconducting selenium compounds; Spectrometry; Zinc; Effusion cells; Excitonic emission; Growth process; Layer-by layer mode; Layer-by-layers; Low temperature photoluminescence; Pulsed beams; Quantum well; Submonolayer; Semiconductor quantum wells

Digital Object Identifier (DOI)

• 10.1116/1.3590721

start page

end page

volume

• 29

issue

• 3