Observation of zinc-blende to diamond transition in metastable (GaAs)1-x(Ge2)x alloys by Raman scattering
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Epitaxial metastable (GaAs)1-x(Ge2)x thin films throughout most of the full compositional x rangs were studied by Raman scattering. From the features observed in the compositional dependence of the ratio Ta/Tb, of the LO-like mode and that between the integrated intensities of the forbidden TO-like mode and of the allowed LO-like mode, we get direct evidence for the zincblende to diamond structural transition, which is observed to occur at x ≈ 0.35. Results are in good agreement with X-ray diffraction data. © 1999 Elsevier Science Ltd. All rights reserved.
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A. Semiconductors; B. Epitaxy; D. Order-disorder effects; Phonons; Thin films Composition effects; Epitaxial growth; Order disorder transitions; Phonons; Raman scattering; Semiconducting gallium arsenide; Thin films; X ray crystallography; Metastability; Semiconducting films
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