abstract

• GaN thin films were grown on flexible metallic substrates by molecular beam epitaxy. MgO buffer layers were deposited by spin coating on Ni-Mo-Cr (Hastelloy C-276) alloy tapes that were used as substrates. The structural characterization of the GaN/MgO/hastelloy samples was performed by x-ray diffraction and Raman spectroscopy. The obtained nanometric films have the stable hexagonal phase (α-GaN) with an average crystallite size of 18 nm. The long and short range order of GaN decrease when the structure is bent. The most significant variations in the structural properties occur between 100 and 250 bending cycles. © 2017 IOP Publishing Ltd.

authors

• Chávez-Veloz S.G.
• Compeán García Vicente Damían
• López Luna Edgar
• Rodríguez Vázquez Ángel Gabriel
• Vidal Borbolla Miguel Angel

publication date

• 2017-01-01

funding provided via

• Consejo Nacional de Ciencia y Tecnología, CONACYT: 225146, 237099  Grant

published in

• Materials Research Express  Journal

keywords

• Flexible semiconductor; GaN; MBE Buffer layers; Chromium alloys; Crystallite size; Gallium nitride; III-V semiconductors; Magnesia; Molecular beam epitaxy; Molecular beams; Molybdenum alloys; Plasma stability; Ternary alloys; Wide band gap semiconductors; Flexible substrate; Hastelloy C-276; Hexagonal phase; Metallic substrate; MgO buffer layer; Plasma assisted molecular beam epitaxy; Short range ordering; Structural characterization; Substrates

Digital Object Identifier (DOI)

• 10.1088/2053-1591/aa7fe4

start page

end page

volume

• 4

issue

• 8