Raman scattering from Ge1-xSnx (x ≤ 0:14) alloys Article

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Overview

abstract

• Ge1-xSnx alloys with x concentration up to 0.14 were grown on Ge(001) and GaAs(001) substrates in a conventional R. F. Magnetron Sputtering system at low substrate temperatures. The structural characteristics of these alloys were studied for different Sn concentrations between 1 to 14 %25 by high resolution X ray diffraction, and Raman spectroscopy. Contrasting characteristics of the grown layers are observed if the Sn concentration is larger or smaller than 6 %25 as revealed by X-ray diffraction and Raman spectroscopy.

authors

• Navarro Contreras Hugo Ricardo
• Pérez-Ladrón de Guevara H.
• Rodríguez Vázquez Ángel Gabriel
• Vidal Borbolla Miguel Angel

publication date

• 2015-01-01

published in

• Revista Mexicana de Fisica  Journal

Research

keywords

• Raman; Space correlation model

Additional Document Info

start page

• 437

end page

• 443

volume

• 61

issue

• 6