Near band-edge optical properties of GaAs at interfaces of ZnSe/GaAs/ GaAs by phase selection in photoreflectance Article uri icon

abstract

  • GaAs at the ZnSe/GaAs and GaAs/GaAs interfaces of ZnSe/GaAs/GaAs heterostructures is studied by phase selective photoreflectance (PR) spectroscopy. Four samples with ZnSe layers of various thickness were examined. We unambiguously determined the origin of two different features observed in the PR spectra by combining in phase and out of phase measurements, with PR measurements employing excitation lasers with different wavelengths. These two features are found to originate at different regions of the heterostructure. One contributing transition is a bulk-like signal, resembling that of bare GaAs, which originates in a region that encompasses the buffer layer/substrate GaAs homointerface. A second contributing signal is attributed to a strained region adjacent to the ZnSe/GaAs heterointerface. Both this second signal and the bulk-like signal show Franz-Keldysh oscillations that allow us to determine the electric field strength at the ZnSe/GaAs and GaAs/GaAs interfaces. It is found that the electric field strength at the heterointerface is larger than that of the homointerface. Reflectance difference measurements further support the existence of two spatially separated GaAs regions, which produce two independent overlapping optical modulated signals in the ZnSe/GaAs/GaAs heterostructures. © 1999 American Institute of Physics.

publication date

  • 1999-01-01