Refractive indices of zincblende structure β-GaN(001) in the subband-gap region (0.7-3.3 eV)
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Refractive indices n and absorption coefficients α of epitaxial metastable zincblende structure β-GaN(001) were determined over the subband-gap energy range between 0.8-3.1 eV from an analysis of optical transmission spectra. n was found to vary from 2.25 to 0.8 eV (1.55 μm) to 2.50 at 3.1 eV (0.4 μm) with an energy E (eV) dependence that is well described by a Sellmeir-type dispersion relationship, n2(E)=1 148/(38.3-E2). The refractive indices of β-GaN are 3%25-4%25 smaller than previously reported values for hexagonal α-GaN. © 1996 American Institute of Physics.
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Refractive indices n and absorption coefficients α of epitaxial metastable zincblende structure β-GaN(001) were determined over the subband-gap energy range between 0.8-3.1 eV from an analysis of optical transmission spectra. n was found to vary from 2.25 to 0.8 eV (1.55 μm) to 2.50 at 3.1 eV (0.4 μm) with an energy E (eV) dependence that is well described by a Sellmeir-type dispersion relationship, n2(E)=1%2b148/(38.3-E2). The refractive indices of β-GaN are 3%25-4%25 smaller than previously reported values for hexagonal α-GaN. © 1996 American Institute of Physics.
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Calculations; Crystal structure; Energy gap; Light absorption; Light transmission; Magnesia; Molecular beam epitaxy; Polynomials; Reflection high energy electron diffraction; Refractive index; Thickness measurement; Transmission electron microscopy; Absorption coefficient; Film thickness; Gallium nitride; Photon energy; Reactive ion molecular beam epitaxy; Zincblende structure; Semiconducting gallium compounds
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