Functionalization of nitrogen-doped carbon nanotubes with gallium to form Ga-CN x-multi-wall carbon nanotube hybrid materials
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In an effort to combine group III-V semiconductors with carbon nanotubes, a simple solution-based technique for gallium functionalization of nitrogen-doped multi-wall carbon nanotubes has been developed. With an aqueous solution of a gallium salt (GaI 3), it was possible to form covalent bonds between the Ga 3 ion and the nitrogen atoms of the doped carbon nanotubes to form a gallium nitride-carbon nanotube hybrid at room temperature. This functionalization was evaluated by x-ray photoelectron spectroscopy, energy dispersive x-ray spectroscopy, Raman spectroscopy, scanning electron microscopy and transmission electron microscopy © 2012 IOP Publishing Ltd.
In an effort to combine group III-V semiconductors with carbon nanotubes, a simple solution-based technique for gallium functionalization of nitrogen-doped multi-wall carbon nanotubes has been developed. With an aqueous solution of a gallium salt (GaI 3), it was possible to form covalent bonds between the Ga 3%2b ion and the nitrogen atoms of the doped carbon nanotubes to form a gallium nitride-carbon nanotube hybrid at room temperature. This functionalization was evaluated by x-ray photoelectron spectroscopy, energy dispersive x-ray spectroscopy, Raman spectroscopy, scanning electron microscopy and transmission electron microscopy © 2012 IOP Publishing Ltd.
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Carbon nanotube hybrids; Energy dispersive X ray spectroscopy; Functionalizations; II-IV semiconductors; Nitrogen atom; Nitrogen-doped; Room temperature; Gallium nitride; Hybrid materials; Nitrogen; Photoelectrons; Raman spectroscopy; Scanning electron microscopy; Transmission electron microscopy; X ray photoelectron spectroscopy; X ray spectroscopy; Doping (additives)
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