abstract

• In an effort to combine group III-V semiconductors with carbon nanotubes, a simple solution-based technique for gallium functionalization of nitrogen-doped multi-wall carbon nanotubes has been developed. With an aqueous solution of a gallium salt (GaI 3), it was possible to form covalent bonds between the Ga 3%2b ion and the nitrogen atoms of the doped carbon nanotubes to form a gallium nitride-carbon nanotube hybrid at room temperature. This functionalization was evaluated by x-ray photoelectron spectroscopy, energy dispersive x-ray spectroscopy, Raman spectroscopy, scanning electron microscopy and transmission electron microscopy © 2012 IOP Publishing Ltd.

authors

• Ajayan P.M.
• Bravo-Sánchez M.
• Hahm M.G.
• Hashim D.P.
• Linhardt R.J.
• López Luna Edgar
• Navarro Contreras Hugo Ricardo
• Simmons T.J.
• Vidal Borbolla Miguel Angel
• Zhan X.

publication date

• 2012-01-01

published in

• Nanotechnology  Journal

keywords

• Carbon nanotube hybrids; Energy dispersive X ray spectroscopy; Functionalizations; II-IV semiconductors; Nitrogen atom; Nitrogen-doped; Room temperature; Gallium nitride; Hybrid materials; Nitrogen; Photoelectrons; Raman spectroscopy; Scanning electron microscopy; Transmission electron microscopy; X ray photoelectron spectroscopy; X ray spectroscopy; Doping (additives)

Digital Object Identifier (DOI)

• 10.1088/0957-4484/23/32/325601

start page

end page

volume

• 23

issue

• 32