Ge1-xSnx alloys pseudomorphically grown on Ge(001) Article

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Overview

abstract

• Crystalline layers of Ge1-xSnx were grown on Ge substrates with a Sn concentration up to x=0.14. Coherent Ge1-x layers were grown on Ge substrates with Sn concentrations and layer thickness that consider the predictions of People and Beam model of critical thickness and thus enabling to obtain epilayers that can be totally dislocation free.

authors

• Navarro Contreras Hugo Ricardo
• Pérez Ladrón De Guevara H.
• Rodríguez Vázquez Ángel Gabriel
• Vidal Borbolla Miguel Angel

publication date

• 2003-01-01

published in

• Applied Physics Letters  Journal

Research

keywords

• Computer simulation; Cooling; Dislocations (crystals); Epitaxial growth; Glow discharges; Lattice constants; Magnetron sputtering; Semiconducting germanium; Semiconductor growth; Bean critical thickness model; Germanium tin alloys; High resolution X ray diffraction; Linear thermal expansion coefficient; Germanium alloys

Identity

Digital Object Identifier (DOI)

• 10.1063/1.1634374

Additional Document Info

start page

• 4942

end page

• 4944

volume

• 83

issue

• 24