abstract

• We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from -3|e| to %2b2|e|. The resulting changes in QD emission energy and exciton fine-structure are recorded in micro-photoluminescence experiments at T=4K. We uncover the existence of excited valence and conduction states, in addition to the s-shell-like ground state. We record a second series of emission lines about 25meV above the charged exciton emission coming from excited charged excitons. For these excited interband transitions, a negative diamagnetic shift of large amplitude is uncovered in longitudinal magnetic fields. © 2014 AIP Publishing LLC.

authors

• Amand T.
• Bouet L.
• Durnev M.V.
• Glazov M.M.
• Ha N.
• Ivchenko E.L.
• Kuroda T.
• Mano T.
• Marie X.
• Sakoda K.
• Urbaszek B.
• Vidal Borbolla Miguel Angel
• Wang G.

publication date

• 2014-01-01

funding provided via

• Dynasty Foundation  Grant
• European Research Council, ERC: 306719  Grant
• Japan Society for the Promotion of Science London, JSPS: 24510145  Grant
• Japan Society for the Promotion of Science London, JSPS: 25390011  Grant

published in

• Applied Physics Letters  Journal

keywords

• Drops; Excited states; Excitons; Gallium arsenide; Ground state; III-V semiconductors; Nanocrystals; Semiconducting gallium; Semiconductor quantum wells; Charged excitons; Conduction state; Controlled charging; Diamagnetic shifts; Exciton fine structure; Inter-band transition; Longitudinal magnetic fields; Micro photoluminescence; Semiconductor quantum dots

Digital Object Identifier (DOI)

• 10.1063/1.4894174

start page

end page

volume

• 105

issue

• 8