Long-range order-disorder transition in (GaAs)1-x(Ge2)x grown on GaAs(001) and GaAs(111) Article uri icon

abstract

  • We have grown (GaAs)1-x(Ge2)x layers on GaAs substrates of both (100) and (111) orientations. High-resolution X-ray diffraction is used to study the zincblende-diamond transition. Our experiments show that the (GaAs)1-x(Ge2)x layers grown on (111) substrates do not present a long-range order-disorder transition for any Ge concentration (except for x = 1). This fact gives the first reported evidence for the confirmation of Holloway and Davis theoretical prediction that the growth direction should have an influence in the long-range order parameter.

publication date

  • 2000-01-01