On the doping problem of CdTe films: The bismuth case Article

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Overview

abstract

• The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 1013 cm- 3, depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 1015 cm- 3. Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented. © 2008 Elsevier B.V. All rights reserved.

authors

• Brown M.
• Calixto M.E.
• Compaan A.D.
• Contreras-Puente G.
• Ramírez-Bon R.
• Ruiz C.M.
• Sánchez-Meza E.
• Tufiño-Velázquez M.
• Vidal Borbolla Miguel Angel
• Vigil-Galán O.

publication date

• 2008-01-01

funding provided via

• 47587  Grant

published in

• Thin Solid Films  Journal

Research

keywords

• Bismuth doping; CdTe; Thin films Bismuth; Cadmium alloys; Cadmium compounds; Direct energy conversion; Metals; Semiconducting cadmium telluride; Solar energy; (Mo Y) doping; As-grown; Concentration (composition); Poly crystalline; Hole concentration

Identity

Digital Object Identifier (DOI)

• 10.1016/j.tsf.2007.12.010

Additional Document Info

start page

• 7013

end page

• 7015

volume

• 516

issue

• 20