abstract

• Gallium nitride films were synthesized on GaAs (0 0 1) substrates at temperatures lower than the congruent sublimation temperature of GaAs. By controlling isothermal desorption of the substrate and setting experimental parameters in the early growth stage, the authors obtained cubic GaN films. No nitridation process or growth of a buffer layer was necessary prior to GaN growth of GaN. In situ reflection high-energy electron diffraction (RHEED) and ex situ high-resolution x-ray diffraction were used to study the crystalline qualities of the films. The measured pole diagram of cubic GaN at 2θ = 34.5° was consistent with RHEED results and confirmed the crystalline structure. Photoluminescence measurements showed a strong emission only at 3.21 eV. © 2016 American Vacuum Society.

authors

• Alanís A.
• López E.
• Vidal Borbolla Miguel Angel
• Vilchis H.

publication date

• 2016-01-01

published in

• Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics  Journal

keywords

• Crystalline materials; Gallium alloys; Gallium arsenide; Molecular beam epitaxy; Reflection high energy electron diffraction; Semiconducting gallium; Semiconductor quantum wells; Sublimation; Substrates; X ray diffraction; Crystalline structure; Experimental parameters; Gallium nitride films; High resolution X ray diffraction; Isothermal desorption; Photoluminescence measurements; Plasma assisted molecular beam epitaxy; Sublimation temperature; Gallium nitride

Digital Object Identifier (DOI)

• 10.1116/1.4943661

start page

end page

volume

• 34

issue

• 2