Determination of the optical energy gap of Ge1-xSnx alloys with 0Article
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abstract
A fast-Fourier-transform infrared interferometer was used to determine the optical energy gap of Ge1-xSnx alloys from transmittance measurements. It was shown by the results that the change from indirect to direct band gap occurs at a lower critical Sn concentration (xc) that the value predicted from the virtual crystal approximation, tight binding and pseudopotential models. It was observed that there is a close agreement between the experimental results and the predictions with deformation potential theory. It was found that the concentration xc, which is theoretically expected to be 0.09, is observed to lie between 0.10
