Characterization of ZnSe films grown on GaAs substrates with InxGa1-xAs and AlxGa1-xAs buffer layers
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In this work we present a study of ZnSe films grown on buffer layers of the ternary compounds InxGa1-xAs and Al1-xGaxAs by means of photoreflectance (PR), and photoluminescence (PL) spectroscopies and transmission electron microscopy (TEM). The buffer layers of the ternary compounds were grown by molecular beam epitaxy (MBE) employing concentrations with 0.01
