Raman study of luminescent spark processed porous GaAs Conference Paper

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Overview

abstract

• A microRaman probe and a scanning electron microscope with energy dispersive spectroscopy system were used to analyze spark-processed porous GaAs samples prepared by high voltage discharges at low repetition rates in different ambients. The resulting material was found to be amorphous material, with amorphous-GaAs, for samples prepared in pure nitrogen. The cubic phases of As2O3 were substituted by the monoclinic phase of As2O3 %27claudetite%27 for samples prepared under a low concentration of oxygen.
• A microRaman probe and a scanning electron microscope with energy dispersive spectroscopy system were used to analyze spark-processed porous GaAs samples prepared by high voltage discharges at low repetition rates in different ambients. The resulting material was found to be amorphous material, with amorphous-GaAs, for samples prepared in pure nitrogen. The cubic phases of As2O3 were substituted by the monoclinic phase of As2O3 'claudetite' for samples prepared under a low concentration of oxygen.

authors

• Gracia J.M.
• Gómez E.
• Navarro Contreras Hugo Ricardo
• Rojas-López M.
• Silva-González R.
• Vidal Borbolla Miguel Angel

publication date

• 2001-01-01

published in

• Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures  Journal

Research

keywords

• Amorphous materials; Concentration (process); Energy dispersive spectroscopy; Luminescence; Morphology; Nitrogen; Oxygen; Raman spectroscopy; Scanning electron microscopy; High-voltage discharges; Semiconducting gallium arsenide

Identity

Digital Object Identifier (DOI)

• 10.1116/1.1366709

Additional Document Info

start page

• 622

end page

• 627

volume

• 19

issue

• 3