Structural study of metastable (GaAs)1-x(Ge2)x thin films grown by RF magnetron sputtering

Epitaxial metastable (GaAs)1-X(Ge2)X thin films have been grown on GaAs(1 0 0) in a RF planar magnetron sputtering system (MS), without As overpressure, throughout most of the full compositional X range. The structural and compositional properties were investigated by high resolution X-ray diffraction (HRXRD) and secondary ion mass spectrometry (SIMS). The SIMS depth profiles demonstrate good homogeneity of Ge concentration for all the samples. HRXRD measurements show that the lattice constant dependence on the concentration X does not obey Vegard%27s law and that a transition between zinc-blende and diamond crystal structures occurs at X ≈ 0.35 © 1999 Elsevier Science B.V. All rights reserved.
Epitaxial metastable (GaAs)1-X(Ge2)X thin films have been grown on GaAs(1 0 0) in a RF planar magnetron sputtering system (MS), without As overpressure, throughout most of the full compositional X range. The structural and compositional properties were investigated by high resolution X-ray diffraction (HRXRD) and secondary ion mass spectrometry (SIMS). The SIMS depth profiles demonstrate good homogeneity of Ge concentration for all the samples. HRXRD measurements show that the lattice constant dependence on the concentration X does not obey Vegard's law and that a transition between zinc-blende and diamond crystal structures occurs at X ≈ 0.35 © 1999 Elsevier Science B.V. All rights reserved.

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