Effects of the substrate tilting angle on the molecular beam epitaxial growth of GaAs on Si(110)
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abstract
The structural and optical properties of GaAs layers grown by molecular beam epitaxy (MBE) on Si(110) substrates tilted towards the [001] direction were studied. AFM results showed a decrease in the rms surface roughness values from 664 Å for an off angle to 0° to 47 Å for an off angle of 6°. The study of HRXRD and cross-sectional TEM showed a reduction in the dislocation density in the films as the off angle was increased from 0° to 6°.
Atomic force microscopy; Composition effects; Crystalline materials; Electric field effects; Energy gap; Molecular beam epitaxy; Oscillations; Semiconducting silicon; Semiconductor growth; Surface roughness; Transmission electron microscopy; X ray diffraction analysis; Crystal quality; Franz-Keldysh model; Full width at half maximum; High resolution x ray diffraction; Internal electric fields; Substrate tilting angle; Semiconducting gallium arsenide
