selected publications
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article
- Influence of pixel etching on electrical and electro-optical performances of a ga-free inas/inassb t2sl barrier photodetector for mid-wave infrared imaging. Photonics. 8:-. 2021-01-01
- Analysis of thermodynamic conditions to grow GaAsP epitaxial layers by LPE on GaAs and GaP substrates. MRS Advances. -. 2020-01-01
- Structural and optical properties of gadolinium doped ZnTe thin films 2020-01-01
- Structural, optical and electrical characterizations of midwave infrared Ga-Free Type-II InAs/InAsSb superlattice barrier photodetector. Photonics. 7:-. 2020-01-01
- Vision-aided system for obtaining a required weight by efficient choice of irregular fragments. Journal of Applied Research and Technology. 15:140-142. 2017-01-01
- Characterization of Al0.047Ga0.953Sb layers grown on GaSb using reciprocal space maps 2016-01-01
- High and abrupt breakdown voltage In0.15Ga0.85As0.14Sb0.86/GaSb junctions grown by LPE. Infrared Physics and Technology. 79:32-35. 2016-01-01
- Hydrogen gas detector card. Journal of Applied Research and Technology. 14:132-134. 2016-01-01
- Sn doped GaSb grown by liquid phase epitaxy. Thin Solid Films. 548:168-170. 2013-01-01
- Preparation and characterization of TiN powder by reactive milling in air. Journal of Ceramic Processing Research. 13:86-88. 2012-01-01
- Effect of oxygen incorporation on the vibrational properties of Al 0.2Ga0.3In0.5P:Be films. Thin Solid Films. 520:53-56. 2011-01-01
- Effect of substrate conductivity on the thickness and composition of GaAlSb epitaxial layers grown by liquid phase epitaxy. Thin Solid Films. 519:3029-3031. 2011-01-01
- Electroweak scale neutrinos and decaying dark matter. Physics Letters, Section B: Nuclear, Elementary Particle and High-Energy Physics. 683:183-185. 2010-01-01
- Self-assembling conditions of 4C10Sn nanoclusters in Ge:(C, Sn). Physica B: Condensed Matter. 404:4543-4545. 2009-01-01
- Study of the oxygen incorporation in Al0.2Ga0.3In0.5P:Be layers grown by MBE employing a P-cracker cell. Journal of Crystal Growth. 311:1650-1654. 2009-01-01
- Influence of the GaAs substrate orientation on the composition of GaxIn1 - xP (x ≈ 0.5) grown by LPE and MOCVD. Thin Solid Films. 516:8092-8095. 2008-01-01
- Photo-selective chemical etching of InAs and GaSb to manufacture microscopic mirrors. Journal of Applied Electrochemistry. 38:269-271. 2008-01-01
- Self-assembling of 4C10Sn clusters in Ge co-doped with C and Sn. Physica E: Low-Dimensional Systems and Nanostructures. 40:883-885. 2008-01-01
- P-cracker cell temperature effects on the optical properties of AlGaInP:Be layers grown by SSMBE. Journal of Crystal Growth. 301-302:84-87. 2007-01-01
- Growth of quantum-well heterostructures by liquid phase epitaxy. Critical Reviews in Solid State and Materials Sciences. 31:1-13. 2006-01-01
- Lattice vibrations study of Ga1-xInxAs ySb1-y quaternary alloys with low (In, As) content grown by liquid phase epitaxy. Journal of Physics: Conference Series. 28:147-150. 2006-01-01
- Investigation of the composition-pulling or lattice-latching effect in LPE. Journal of Crystal Growth. 277:138-142. 2005-01-01
- Influence of baking on the photoluminescence spectra of In 1-xGaxAsyP1-y solid solutions grown on Inp substrates. Revista Mexicana de Fisica. 50:216-220. 2004-01-01
- Investigation of the phase diagram of the Pb-Ga-Sb system. Thin Solid Films. 461:233-236. 2004-01-01
- Some experiments on the growth of InTlSb by LPE. Journal of Crystal Growth. 241:101-107. 2002-01-01
- Control of the critical supercooling in LPE. Journal of Electronic Materials. 29:1402-1405. 2000-01-01
- High purity GaSb grown by LPE in a sapphire boat. Journal of Crystal Growth. 208:27-32. 2000-01-01
- Shallow to deep transformation of Se donors in GaSb under hydrostatic pressure. Physical Review B - Condensed Matter and Materials Physics. 59:8003-8007. 1999-01-01
- Some perspectives and peculiarities of the LPE growth of multicomponent Sb-based solid solutions from pentanary liquid phases. Journal of Electronic Materials. 28:959-962. 1999-01-01
- Temperature determination by solubility measurements and a study of evaporation of volatile components in LPE. Thin Solid Films. 340:24-27. 1999-01-01
- A new LPE growth method of semiconductor heterostructures with thickness profile variation of epitaxial layers. Journal of Electronic Materials. 27:1003-1004. 1998-01-01
- AlGaAsSb and AlGaInAsSb growth from Sb-rich solutions. Crystal Research and Technology. 33:457-463. 1998-01-01
- Center transformation of Te donors in GaSb under hydrostatic pressure. Physical Review B - Condensed Matter and Materials Physics. 57:12169-12173. 1998-01-01
- Growth of low-etch-pit density InSb single crystals by the Czochralski method. Journal of Crystal Growth. 178:422-425. 1997-01-01
- InGaAsSb growth from Sb-rich solutions. Journal of Crystal Growth. 180:34-39. 1997-01-01
- Photoluminescence of epitaxial GaAs grown by close space vapor transport method. Solid State Communications. 49:939-942. 1984-01-01
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conference paper
- Antimonide-based superlattice infrared barrier photodetectors. PHOTOPTICS 2020 - Proceedings of the 8th International Conference on Photonics, Optics and Laser Technology. 45-51. 2020-01-01
- CdTe, ZnTe and Cd1-XZnXTe Nanolayers Grown by Atomic Layer Deposition on GaSb and GaAs (001) Oriented Substrates. MRS Advances. 2875-2882. 2017-01-01
- Estimation of the instable composition areas and its dependence on the thickness of GalnAsSb layers grown on different substrates. Journal of Physics: Conference Series. -. 2017-01-01
- Structural characterization of ZnTe grown by atomic-layer-deposition regime on GaAs and GaSb (100) oriented substrates1. Materials Research. 1179-1184. 2017-01-01
- A Hydrogen detectors Wireless network for monitoring the gas ambient in a laboratory. Journal of Physics: Conference Series. -. 2015-01-01
- Automation of a crystal growth system by the liquid phase epitaxy technique. CCE 2012 - 2012 9th International Conference on Electrical Engineering, Computing Science and Automatic Control. -. 2012-01-01
- Electroweak scale neutrinos and decaying Majorons. Journal of Physics: Conference Series. -. 2011-01-01
- Influence of substrate conductivity type on the thickness and composition of epitaxial layers grown by Liquid Phase Epitaxy. Thin Solid Films. 700-702. 2011-01-01
- Quantum dots obtained by LPE from under-saturated In-As liquid phases on GaAs substrates. Journal of Physics: Conference Series. -. 2011-01-01
- GaIn as Quantum Dots (QD) grown by Liquid Phase Epitaxy (LPE). Journal of Physics: Conference Series. -. 2009-01-01
- GaSb grown from Sn solvent at low temperatures by LPE. Journal of Physics: Conference Series. -. 2009-01-01
- Carrier concentration control of GaSb/GaInAsSb system. AIP Conference Proceedings. 115-124. 2007-01-01
- Study of Te diffused into GaSb by photoluminescence and HRXRD. Physica Status Solidi (C) Current Topics in Solid State Physics. 1406-1410. 2007-01-01
- A survey of new laser and detector structures for 3-5 μm mid-infrared spectral range. Proceedings of SPIE - The International Society for Optical Engineering. 211-221. 2004-01-01
- Influence of substrate conductivity on layer thickness in LPE GaAs. Journal of Crystal Growth. 375-377. 2004-01-01
- New laser and detector structures for mid-infrared. Proceedings of the International Conference on Advanced Optoelectronics and Lasers, CAOL. 14-22. 2003-01-01
- Study of Al0.065Ga0.935Sb avalanche photodetectors for 1.55 μm of wavelength by liquid phase epitaxy at low temperature. Surface Review and Letters. 1741-1745. 2002-01-01
- Multicomponent Sb-based solid solutions grown from Sb-rich liquid phases. Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. 37-40. 1997-01-01