AlGaAsSb and AlGaInAsSb growth from Sb-rich solutions
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This work is related to the use of Sb as a solvent for the growth of antimony-based solid solutions by LPE. We have developed the growth technology of AlGaAsSb on GaSb substrates. A GaSb solid phase is eroded or melted back in contact with a saturated Al-Ga-As-Sb liquid due to the high non equilibrium degree on this system and the erosion increases with Al concentration. One of the techniques to diminish the erosion consists in increasing the initial supercooling but in this system, in the investigated area of compositions, it is impossible because of the low critical supercooling (ΔTcr) of the liquid phase. We have conceived and developed a method to control ΔTcr by adding In to the liquid phase. It was found that when the In concentration increased the ΔTcr also increased. So the transition from the quaternary AlGaAsSb to the pentanary AlGaInAsSb allowed us to decrease the erosion process. This technique permits to grow high quality multilayer heterostructures based on antimonides.
