Antimonide-based superlattice infrared barrier photodetectors
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abstract
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Barrier structures are now the design of high performance antimonide-based (Sb-based) cooled infrared (IR) quantum detectors. In this communication, we report on electrical and electro-optical characterizations of Ga-free and Ga-containing type-II superlattices (T2SL) photodetectors structures grown by Molecular Beam Epitaxy (MBE). Experimental measurements on Ga-free XBn and Ga-containing XBp samples were made by photo-response measurements and dark current density-voltage (J-V) characteristics performed on detectors as a function of temperature. Identification of bias voltage characteristics were extracted from measurements and resulting dark current values were compared to the state of the art of infrared technology. Copyright © 2020 by SCITEPRESS - Science and Technology Publications, Lda. All rights reserved
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keywords
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Barrier Structure; Infrared Quantum Detector; Sb-based Heterostructure; Type-II Superlattice Infrared radiation; Molecular beam epitaxy; Optical communication; Photodetectors; Photonics; Photons; Barrier structures; Electro-optical characterizations; Infrared technology; Photo response measurement; Quantum detectors; State of the art; Type-II superlattices; Voltage characteristics; Current voltage characteristics
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