Sn doped GaSb grown by liquid phase epitaxy Article

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Overview

abstract

• Sn doped GaSb has been grown at 260 C by liquid phase epitaxy. The experiments were done so as to determine if Sn could change its impurity type, from acceptor to donor, at such low growth temperature. It was found that Sn behaves as an acceptor irrespective of the growth temperature or the Sn concentration in the nutrient liquid. The samples were studied by photoluminescence and secondary ion mass spectroscopy. From these experiments the segregation coefficient of Sn in the Ga-Sb-Sn system at 260 C has been measured. Also the activation energy of the Sn acceptor level was determined at 20 K. © 2013 Elsevier B.V. All rights reserved.

authors

• Compeán-Jasso V.H.
• De Anda Salazar Francisco Javier
• Gorbatchev Andrei
• Kudriavtsev Y.
• Mishurnyi V.A.
• Prutskij T.

publication date

• 2013-01-01

published in

• Thin Solid Films  Journal

Research

keywords

• Doping; Gallium antimony; Liquid phase epitaxy; Tin Acceptor levels; Gallium antimonies; Low growth temperature; Secondary ion mass spectroscopy; Segregation coefficients; Sn concentration; Sn-doped; Activation energy; Doping (additives); Experiments; Gallium; Gallium alloys; Growth temperature; Liquid phase epitaxy; Secondary ion mass spectrometry; Tin

Identity

Digital Object Identifier (DOI)

• 10.1016/j.tsf.2013.09.052

Additional Document Info

start page

• 168

end page

• 170

volume

• 548