abstract

• The LPE growth of GaSb using Sn as a solvent has been studied in the temperature range 250-370 C and using liquid solutions covering a wide range of compositions. In order to find the growth conditions the phase diagram has been determined experimentally around the same temperature region. It is shown the Sn incorporates into the grown layers and that it behaves as an acceptor. The photoluminescence spectra of the grown layers with different Sn contents show characteristic peaks that can be attributed to different recombination processes. © 2009 IOP Publishing Ltd.

authors

• Compeán-Jasso V.H.
• De Anda Salazar Francisco Javier
• Gorbatchev Andrei
• Mishurnyi V.A.

publication date

• 2009-01-01

published in

• Journal of Physics: Conference Series  Journal

Digital Object Identifier (DOI)

• 10.1088/1742-6596/167/1/012024

start page

end page

volume

• 167