Photoluminescence of epitaxial GaAs grown by close space vapor transport method
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We report here the first observation of photoluminescence spectra of GaAs epitaxial layers prepared by close space vapor transport method. At 77 K two PL signals were found, the near-band gap transition at 1,51 eV and the other at 1,4 eV. The nature of PL emission lines is discussed in relation with the features of growth method. No simple relation between the growth conditions and concentration of radiative centers was found. © 1984.
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PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE
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