Self-assembling of 4C10Sn clusters in Ge co-doped with C and Sn Article

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Overview

abstract

• Self-assembling of 4C10Sn clusters in Ge co-doped with C and Sn is considered. The free energies of Ge-rich CxSnyGe1-x-y (x≤0.02, x≥0.4y) random alloys and alloys with 4C10Sn and 1C4Sn clusters are estimated at temperature of 773 K. The concentration conditions when the free energy of CxSnyGe1-x-y with 4C10Sn clusters is smaller than those of random alloys and alloys with 1C4Sn clusters are obtained. Occurrence of 4C10Sn clusters is a result of a stronger decrease of the strain energy after such self-assembling than after self-assembling of 1C4Sn clusters. © 2007 Elsevier B.V. All rights reserved.

authors

• De Anda Salazar Francisco Javier
• Elyukhin V.A.
• Mishurnyi V.A.
• Sorokina L.P.

publication date

• 2008-01-01

published in

• Physica E: Low-Dimensional Systems and Nanostructures  Journal

Research

keywords

• 4C10Sn clusters; Isoelectronic impurities; Self-assembling Carbon; Concentration (process); Doping (additives); Self assembly; Strain energy; Tin; Isoelectronic impurities; Germanium

Identity

Digital Object Identifier (DOI)

• 10.1016/j.physe.2007.10.116

Additional Document Info

start page

• 883

end page

• 885

volume

• 40

issue

• 4